標題: InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd : YVO4 laser at 1342 nm
作者: Su, KW
Lai, HC
Li, A
Chen, YF
Huang, KE
電子物理學系
Department of Electrophysics
公開日期: 15-Jun-2005
摘要: We report that lnAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained. (c) 2005 Optical Society of America
URI: http://dx.doi.org/10.1364/OL.30.001482
http://hdl.handle.net/11536/13580
ISSN: 0146-9592
DOI: 10.1364/OL.30.001482
期刊: OPTICS LETTERS
Volume: 30
Issue: 12
起始頁: 1482
結束頁: 1484
Appears in Collections:Articles