InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd : YVO4 laser at 1342 nm

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Su, KW	en_US
dc.contributor.author	Lai, HC	en_US
dc.contributor.author	Li, A	en_US
dc.contributor.author	Chen, YF	en_US
dc.contributor.author	Huang, KE	en_US
dc.date.accessioned	2014-12-08T15:18:52Z	-
dc.date.available	2014-12-08T15:18:52Z	-
dc.date.issued	2005-06-15	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.30.001482	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13580	-
dc.description.abstract	We report that lnAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained. (c) 2005 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd : YVO4 laser at 1342 nm	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OL.30.001482	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.citation.volume	30	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1482	en_US
dc.citation.epage	1484	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000229689400018	-
dc.citation.woscount	18	-
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