Ge Channel MOSFETs Directly on Silicon

Abstract

This paper presents high performance Ge/Si diode, trigate Ge PFET, junctionless trigate Ge PFET and strained Ge NFET directly on Si wafer. The leakage current of the Ge/Si diode is as low as <10(-7) A/cm(2). Trigate PFET depicts a driving current of 22 mu A/mu m at V-G = -2 V and a low OFF-current of 3 nA/mu m at V-G = 2 V. Junctionless trigate PFET shows I-ON/I-oFF ratio of similar to 6 x 10(4) ( I-D), similar to 6 x10(5) (I-s), and the remarkably low off-current of 450 pA/mu m at V-D = -0.1 V. Strained trigate Ge NFET is demonstrated.