標題: Analytical Model to Evaluate the Role of Deep Trap State in the Reliability of NAND Flash Memory and its Process Dependence
作者: Yang, B-J.
Wu, Y-T.
Chiu, Y-Y.
Shirota, R.
Kuo, T-M.
Chang, J-H.
Wang, P-Y.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Flash memory reliability;trap;plasma oxidation
公開日期: 2016
摘要: An elementary step of trap and detrap processes of electron in the tunnel oxide during program/erase in NAND Flash memory is precisely studied. Owing to the high electric field during program and erase (P/E), the electron trapping and detrapping occur at the same time. Consequently, the detrapping process only leaves electrons in the deeper trap energy state (Etrap) than 3.5 eV. In addition, as-grown trap density (Ne) and capture cross section (a) in the deep trap state can be specified to explain the measured data including the tunneling current modulation with cycling and the VT shift by oxide trap. The P/E endurance characteristics using dry and plasma oxidation processes are analyzed and compared. In both processes, a has the same value (4x10-17 cm(2)). However, Ne depends on the oxidation process. In dry oxidation, Ne is 1.88x10(19) cm(-3). On the other hand, in plasma oxidation, 30% reduction (1.25x10(19) cm(-3)) can be found.
URI: http://hdl.handle.net/11536/135898
ISBN: 978-1-4673-8833-7
ISSN: 2330-7978
期刊: 2016 IEEE 8TH INTERNATIONAL MEMORY WORKSHOP (IMW)
Appears in Collections:Conferences Paper