標題: V-Band Dual-Conversion Down-Converter with Schottky-Diode Ring-Mixer Using 0.35 mu m SiGe BiCMOS Process
作者: Kao, Jen-Chieh
Meng, Chinchun
Lo, Tai-Lin
Huang, Guo-Wei
電機學院
College of Electrical and Computer Engineering
關鍵字: dual-conversion downconverter;Schottky diode mixer;Marchand balun;SiGe BiCMOS
公開日期: 2015
摘要: A V-band dual-conversion downconverter using 0.35 mu m SiGe BiCMOS process is demonstrated in this paper. This downconverter contains three sub-circuits, a V-band Schottky-diode RF mixer with Marchand balun, a 15-GHz low-noise IF buffer amplifier, and an IF Gilbert mixer. The Schottky diode has high cutoff frequency because of the n+ buried layer in the SiGe BiCMOS process. Thus, a fundamental ring-mixer is employed as the RF mixer. A Marchand balun has a broadband feature, and the feature has been used to achieve converter for high frequency circuit applications. In addition to this, a low-noise buffer amplifier is used to provide enough gain performance. By combining these advantages, a dual-conversion downconverter is successfully achieved. The downconverter has about 6 dB conversion loss, 18 GHz RF bandwidth, 800 MHz IF bandwidth and about -6 dBm IP1dB when LO1 power is 5 dBm and LO2 power is 8 dBm.
URI: http://hdl.handle.net/11536/135916
ISBN: 978-1-4799-8767-2
期刊: 2015 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), VOLS 1-3
Appears in Collections:Conferences Paper