標題: | V-Band Dual-Conversion Down-Converter with Schottky-Diode Ring-Mixer Using 0.35 mu m SiGe BiCMOS Process |
作者: | Kao, Jen-Chieh Meng, Chinchun Lo, Tai-Lin Huang, Guo-Wei 電機學院 College of Electrical and Computer Engineering |
關鍵字: | dual-conversion downconverter;Schottky diode mixer;Marchand balun;SiGe BiCMOS |
公開日期: | 2015 |
摘要: | A V-band dual-conversion downconverter using 0.35 mu m SiGe BiCMOS process is demonstrated in this paper. This downconverter contains three sub-circuits, a V-band Schottky-diode RF mixer with Marchand balun, a 15-GHz low-noise IF buffer amplifier, and an IF Gilbert mixer. The Schottky diode has high cutoff frequency because of the n+ buried layer in the SiGe BiCMOS process. Thus, a fundamental ring-mixer is employed as the RF mixer. A Marchand balun has a broadband feature, and the feature has been used to achieve converter for high frequency circuit applications. In addition to this, a low-noise buffer amplifier is used to provide enough gain performance. By combining these advantages, a dual-conversion downconverter is successfully achieved. The downconverter has about 6 dB conversion loss, 18 GHz RF bandwidth, 800 MHz IF bandwidth and about -6 dBm IP1dB when LO1 power is 5 dBm and LO2 power is 8 dBm. |
URI: | http://hdl.handle.net/11536/135916 |
ISBN: | 978-1-4799-8767-2 |
期刊: | 2015 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), VOLS 1-3 |
顯示於類別: | 會議論文 |