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dc.contributor.authorLin, C. H.en_US
dc.contributor.authorLing, H. S.en_US
dc.contributor.authorSun, K. W.en_US
dc.contributor.authorLee, C. P.en_US
dc.contributor.authorLin, S. D.en_US
dc.contributor.authorLiu, Y. K.en_US
dc.contributor.authorYang, M. D.en_US
dc.contributor.authorShen, J. L.en_US
dc.date.accessioned2014-12-08T15:18:54Z-
dc.date.available2014-12-08T15:18:54Z-
dc.date.issued2009en_US
dc.identifier.issn1937-6456en_US
dc.identifier.urihttp://hdl.handle.net/11536/13601-
dc.identifier.urihttp://dx.doi.org/10.1166/jcp.2009.1060en_US
dc.description.abstractWe have investigated the temperature dependence of the carrier relaxation dynamics in InAs/GaAs self-assembled quantum rings by using the time-resolved photoluminescence technique with a time resolution of similar to 250 ps. The carrier relaxation in the QRs not only shows strong dependence on the lattice temperature, it is also significant slower than the carrier relaxation in the quantum dots at temperature above 150 K.en_US
dc.language.isoen_USen_US
dc.subjectTime-Resolved Photoluminescenceen_US
dc.subjectQuantum Ringsen_US
dc.subjectQuantum Dotsen_US
dc.titleCarrier Dynamics in InAs/GaAs Quantum Ringsen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jcp.2009.1060en_US
dc.identifier.journalJOURNAL OF SCIENTIFIC CONFERENCE PROCEEDINGS, VOL 1, NOS 2 AND 3en_US
dc.citation.volume1en_US
dc.citation.issue2-3en_US
dc.citation.spage100en_US
dc.citation.epage102en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000282747200003-
Appears in Collections:Conferences Paper


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