Carrier Dynamics in InAs/GaAs Quantum Rings

doi:10.1166/jcp.2009.1060

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, C. H.	en_US
dc.contributor.author	Ling, H. S.	en_US
dc.contributor.author	Sun, K. W.	en_US
dc.contributor.author	Lee, C. P.	en_US
dc.contributor.author	Lin, S. D.	en_US
dc.contributor.author	Liu, Y. K.	en_US
dc.contributor.author	Yang, M. D.	en_US
dc.contributor.author	Shen, J. L.	en_US
dc.date.accessioned	2014-12-08T15:18:54Z	-
dc.date.available	2014-12-08T15:18:54Z	-
dc.date.issued	2009	en_US
dc.identifier.issn	1937-6456	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13601	-
dc.identifier.uri	http://dx.doi.org/10.1166/jcp.2009.1060	en_US
dc.description.abstract	We have investigated the temperature dependence of the carrier relaxation dynamics in InAs/GaAs self-assembled quantum rings by using the time-resolved photoluminescence technique with a time resolution of similar to 250 ps. The carrier relaxation in the QRs not only shows strong dependence on the lattice temperature, it is also significant slower than the carrier relaxation in the quantum dots at temperature above 150 K.	en_US
dc.language.iso	en_US	en_US
dc.subject	Time-Resolved Photoluminescence	en_US
dc.subject	Quantum Rings	en_US
dc.subject	Quantum Dots	en_US
dc.title	Carrier Dynamics in InAs/GaAs Quantum Rings	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1166/jcp.2009.1060	en_US
dc.identifier.journal	JOURNAL OF SCIENTIFIC CONFERENCE PROCEEDINGS, VOL 1, NOS 2 AND 3	en_US
dc.citation.volume	1	en_US
dc.citation.issue	2-3	en_US
dc.citation.spage	100	en_US
dc.citation.epage	102	en_US
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:000282747200003	-
顯示於類別：	會議論文