完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, C. H. | en_US |
dc.contributor.author | Ling, H. S. | en_US |
dc.contributor.author | Sun, K. W. | en_US |
dc.contributor.author | Lee, C. P. | en_US |
dc.contributor.author | Lin, S. D. | en_US |
dc.contributor.author | Liu, Y. K. | en_US |
dc.contributor.author | Yang, M. D. | en_US |
dc.contributor.author | Shen, J. L. | en_US |
dc.date.accessioned | 2014-12-08T15:18:54Z | - |
dc.date.available | 2014-12-08T15:18:54Z | - |
dc.date.issued | 2009 | en_US |
dc.identifier.issn | 1937-6456 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13601 | - |
dc.identifier.uri | http://dx.doi.org/10.1166/jcp.2009.1060 | en_US |
dc.description.abstract | We have investigated the temperature dependence of the carrier relaxation dynamics in InAs/GaAs self-assembled quantum rings by using the time-resolved photoluminescence technique with a time resolution of similar to 250 ps. The carrier relaxation in the QRs not only shows strong dependence on the lattice temperature, it is also significant slower than the carrier relaxation in the quantum dots at temperature above 150 K. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Time-Resolved Photoluminescence | en_US |
dc.subject | Quantum Rings | en_US |
dc.subject | Quantum Dots | en_US |
dc.title | Carrier Dynamics in InAs/GaAs Quantum Rings | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1166/jcp.2009.1060 | en_US |
dc.identifier.journal | JOURNAL OF SCIENTIFIC CONFERENCE PROCEEDINGS, VOL 1, NOS 2 AND 3 | en_US |
dc.citation.volume | 1 | en_US |
dc.citation.issue | 2-3 | en_US |
dc.citation.spage | 100 | en_US |
dc.citation.epage | 102 | en_US |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:000282747200003 | - |
顯示於類別: | 會議論文 |