Extremely High Mobility Ultra-Thin Metal-Oxide with ns(2)np(2) Configuration

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DC Field	Value	Language
dc.contributor.author	Shih, C. W.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Lu, Chun-Fu	en_US
dc.contributor.author	Yi, S. H.	en_US
dc.date.accessioned	2017-04-21T06:48:32Z	-
dc.date.available	2017-04-21T06:48:32Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-4673-9894-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136042	-
dc.description.abstract	To increase the transistor\'s current (I-ON) and decrease the off-state leakage (I-OFF), high-mobility, wide-bandgap and ultra-thin body channel materials are crucial for display, sub-10 nm MOSFET, and brain-mimicking 3D IC. The wide-bandgap ultra-thin-film SnO2 nMOSFET has achieved a high I-ON/I-OFF of > 10(7), and high mobility of >0.5X SiO2/Si device value operated at 1 MV/cm. The high mobility TFT is due to the overlapped orbitals.	en_US
dc.language.iso	en_US	en_US
dc.title	Extremely High Mobility Ultra-Thin Metal-Oxide with ns(2)np(2) Configuration	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000380472500036	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper