Extremely High Mobility Ultra-Thin Metal-Oxide with ns(2)np(2) Configuration

Abstract

To increase the transistor\'s current (I-ON) and decrease the off-state leakage (I-OFF), high-mobility, wide-bandgap and ultra-thin body channel materials are crucial for display, sub-10 nm MOSFET, and brain-mimicking 3D IC. The wide-bandgap ultra-thin-film SnO2 nMOSFET has achieved a high I-ON/I-OFF of > 10(7), and high mobility of >0.5X SiO2/Si device value operated at 1 MV/cm. The high mobility TFT is due to the overlapped orbitals.