InGaAs Metal-Oxide-Semiconductor FETs with Self-Aligned Ni-Alloy Source/Drain

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DC Field	Value	Language
dc.contributor.author	Wang, Shin-Yuan	en_US
dc.contributor.author	Chien, Chao-Hsin	en_US
dc.contributor.author	Lin, Jin-Ju	en_US
dc.contributor.author	Chang, Chun-Yen	en_US
dc.date.accessioned	2017-04-21T06:49:47Z	-
dc.date.available	2017-04-21T06:49:47Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-4799-9928-6	en_US
dc.identifier.issn	1946-1550	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136106	-
dc.description.abstract	N-type InGaAs MOSFETs with self-aligned nickel-InGaAs alloy and ex-situ ALD Al2O3 as gate dielectrics was successfully fabricated. The InGaAs MOSFETs exhibit an S/D resistance (RSD) that is lower than that in P-N junction devices due to the low Schottky barrier height and the peak mobility was about 1138 cm(2)/V-s and the interface state density (D-it) was about 10(12) cm(-2)eV(-1) at ET = EV + 0.6 eV by using full-conductance method	en_US
dc.language.iso	en_US	en_US
dc.title	InGaAs Metal-Oxide-Semiconductor FETs with Self-Aligned Ni-Alloy Source/Drain	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)	en_US
dc.citation.spage	390	en_US
dc.citation.epage	393	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000380466200099	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper