GeO2/PZT Resistive Random Access Memory Devices With Ni electrode

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chou, Kun-I	en_US
dc.contributor.author	Cheng, Chun-Hu	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2017-04-21T06:50:00Z	-
dc.date.available	2017-04-21T06:50:00Z	-
dc.date.issued	2013	en_US
dc.identifier.isbn	978-1-4673-2523-3	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136157	-
dc.description.abstract	We report a resistive random-access memory (RRAM) using stacked GeO2 and PZT. Under unipolar mode operation, the Ni/GeO2/PZT/TaN RRAM shows a good DC cycling of 2x10(3) cycles, 85 degrees C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.	en_US
dc.language.iso	en_US	en_US
dc.subject	RRAM	en_US
dc.subject	GeO2	en_US
dc.subject	TiO2	en_US
dc.subject	PZT	en_US
dc.title	GeO2/PZT Resistive Random Access Memory Devices With Ni electrode	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000380585600164	en_US
dc.citation.woscount	0	en_US
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