標題: | On-Chip ESD Protection Designs in RF Integrated Circuits for Radio and Wireless Applications |
作者: | Ker, Ming-Dou Lin, Chun-Yu 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Electrostatic discharge (ESD);low capacitance;radio-frequency (RF) |
公開日期: | 2013 |
摘要: | CMOS technology has been used to implement the radio and wireless integrated circuits. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection design on circuit performances, ESD protection at input/output pads must be carefully designed. A review on ESD protection designs with low parasitic capacitance for radio and wireless applications is presented in this paper. The comparisons among these ESD protection designs are also discussed. |
URI: | http://hdl.handle.net/11536/136160 |
ISBN: | 978-1-4673-2523-3 |
期刊: | 2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) |
Appears in Collections: | Conferences Paper |