標題: Effect of Thermal Annealing on a-plane GaN Grown on r-plane Sapphire
作者: Ko, Tsung-Shine
Lu, Tien-Chang
Chen, Jung-Ron
Ou, Sin-Liang
Chang, Chia-Ming
Kuo, Hau-Chung
Lin, Der-Yuh
光電工程學系
Department of Photonics
關鍵字: non-polar;GaN;annealing;threading dislocation;stack fault
公開日期: 2014
摘要: The crystal quality improvement of a-plane GaN grown on r-plane sapphire was demonstrated by applying thermal annealing on as-grown samples in nitrogen ambient. The root mean square roughness of the 1000 degrees C-annealed a-plane GaN was only 0.4 nm measured by atomic force microscopy. Transmission electron microscopy results further indicate threading dislocations were decreased from 5x10(10) cm(-2) to 1.5x10(10) cm(-2) along [0001] GaN and stacking faults were decreased from 8.7x 10(5) cm(-1) to 4.8x 10(5) cm(-1) after the sample was annealed at 1000 degrees C. Room temperature photo luminescence measurements showed band edge emission intensity was enhanced up to 2.6 folds compared to the regular a-plane GaN film. Furthermore, corresponding cathode luminescence images reveal larger emission area for a-plane GaN with annealing than those without annealing, which was attributed to reduction of the nonradiative recombination centers. A series of experiments confirm this annealing process could be useful for further applications of GaN-based optoelectric devices.
URI: http://hdl.handle.net/11536/136238
ISBN: 978-1-4799-5038-6
ISSN: 2159-3523
期刊: 2014 IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC)
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