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dc.contributor.authorHuang, Yu-Hsiangen_US
dc.contributor.authorLiang, Hao-Wenen_US
dc.contributor.authorCheng, Chuan-Anen_US
dc.contributor.authorLin, Chien-Hungen_US
dc.contributor.authorLee, Chia-Linen_US
dc.contributor.authorYang, Shan-Chunen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2017-04-21T06:49:37Z-
dc.date.available2017-04-21T06:49:37Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-1204-6en_US
dc.identifier.issn0569-5503en_US
dc.identifier.urihttp://dx.doi.org/10.1109/ECTC.2016.308en_US
dc.identifier.urihttp://hdl.handle.net/11536/136268-
dc.description.abstractA novel amorphous silicon temporary bonding and corresponding laser assisted de-bonding technology are investigated for the improvement of 3D integration. Excellent bonding results with real device wafer with alpha-IGZO thin-film transistor are shown at the bonding temperature of 210 degrees C, as well as outstanding performances for bonding strength, thermal stability, reliability and chemical resistance. Laser ablated amorphous silicon is proved stable and ultra-fast. Advantages of excellent bonding quality, lower cost and higher throughput demonstrate that this scheme can be a potential candidate in 3D integration platform.en_US
dc.language.isoen_USen_US
dc.titleStudy of a Novel Amorphous Silicon Temporary Bonding and Corresponding Laser Assisted De-bonding Technologyen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/ECTC.2016.308en_US
dc.identifier.journal2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)en_US
dc.citation.spage2547en_US
dc.citation.epage2552en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000386103500381en_US
dc.citation.woscount0en_US
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