標題: Interdiffusion of Cu-Sn System with Ni Ultra-thin Buffer Layer and Material Analysis of IMC Growth Mechanism
作者: Fan, Cheng-Han
Chang, Yao-Jen
Chou, Yi-Chia
Chen, Kuan-Neng
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 2014
摘要: In this paper, Ni ultra-thin diffusion buffer layer between Cu/Sn is inserted to suppress the IMC (n-phase) inter-diffusion reaction. We analogy the bonding condition by using single side Cu/Ni buffer layer/Sn structure. The inter-diffusion behaviors and IMC growth are investigated under the same thermal budget of bonding temperature during the heating step. Cu/Sn IMC formation behavior with Ni buffer layer is summarized by the SEM inspection. In the results of different Ni buffer layers (t(Ni) = 0, 50, 100, 150 angstrom) and thermal durations (0 to 60 sec), Ni buffer layer insertion can effectively reduce Cu/Sn IMC thickness. In addition, rapid growth of similar to 1.5 mu m Cu/Sn IMC thickness at 250 degrees C for only 10 sec is discovered. As results, 100 angstrom Ni buffer layer is necessary to apply as the Cu/Sn system enters the submicron pad bonding interconnects.
URI: http://hdl.handle.net/11536/136334
ISBN: 978-1-4799-7727-7
期刊: 2014 9TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT)
起始頁: 37
結束頁: 40
Appears in Collections:Conferences Paper