Atomically resolved interface structure between epitaxial TiN film and MgO substrate

doi:10.1016/j.tsf.2016.07.037

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wei, Lin-Lung	en_US
dc.contributor.author	Yen, Tzu-Chun	en_US
dc.contributor.author	Do, Hien	en_US
dc.contributor.author	Chang, Li	en_US
dc.date.accessioned	2017-04-21T06:48:54Z	-
dc.date.available	2017-04-21T06:48:54Z	-
dc.date.issued	2016-11-01	en_US
dc.identifier.issn	0040-6090	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.tsf.2016.07.037	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136347	-
dc.description.abstract	In this study, we used a high quality epitaxial TiN thin film grown on MgO (001) substrate for the investigation of the TiN/MgO interface structure which was characterized with scanning transmission electron microscopy (STEM) at atomic resolution. Analyses of high angle annular dark-field and annular bright-field STEM image contrast with X-ray energy dispersive spectroscopy maps show that a 2-4 nm diffuse interlayer of mixed compositions exists coherently between TiN and MgO with the same structure and across the interface the ionic bonding sequences are maintained without any interruption. (C) 2016 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Interface	en_US
dc.subject	Epitaxial	en_US
dc.subject	Scanning transmission electron microscopy	en_US
dc.title	Atomically resolved interface structure between epitaxial TiN film and MgO substrate	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/j.tsf.2016.07.037	en_US
dc.identifier.journal	THIN SOLID FILMS	en_US
dc.citation.volume	618	en_US
dc.citation.spage	8	en_US
dc.citation.epage	12	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000389112000003	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文