Atomically resolved interface structure between epitaxial TiN film and MgO substrate

Abstract

In this study, we used a high quality epitaxial TiN thin film grown on MgO (001) substrate for the investigation of the TiN/MgO interface structure which was characterized with scanning transmission electron microscopy (STEM) at atomic resolution. Analyses of high angle annular dark-field and annular bright-field STEM image contrast with X-ray energy dispersive spectroscopy maps show that a 2-4 nm diffuse interlayer of mixed compositions exists coherently between TiN and MgO with the same structure and across the interface the ionic bonding sequences are maintained without any interruption. (C) 2016 Elsevier B.V. All rights reserved.