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dc.contributor.authorHsieh, E. R.en_US
dc.contributor.authorHung, C. M.en_US
dc.contributor.authorWang, T. Y.en_US
dc.contributor.authorChung, Steve S.en_US
dc.contributor.authorHuang, R. M.en_US
dc.contributor.authorTsai, C. T.en_US
dc.contributor.authorYew, T. R.en_US
dc.date.accessioned2017-04-21T06:49:14Z-
dc.date.available2017-04-21T06:49:14Z-
dc.date.issued2014en_US
dc.identifier.isbn978-1-4799-8000-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/136362-
dc.description.abstractVariability has been one of the major scaling issues in advancing the CMOS technology. In this paper, a variation model from the device level to circuit level has been proposed and demonstrated on advanced trigate FinFETs. First, a simple and accurate transport model was developed to model variability at the device level. It was then implemented in Spice and the calculation of variation of basic logic gate building block was demonstrated with only W/L and the slopes, A(vt), A(gm), in the Pelgrom plot, as inputs. Finally, a unified simple analytic form was developed to predict the variability of various basic logic circuits regardless of the number of devices and the complexity of circuits.en_US
dc.language.isoen_USen_US
dc.titleA Circuit Level Variability Prediction of Basic Logic Gates in Advanced Trigate CMOS Technologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000370384800074en_US
dc.citation.woscount0en_US
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