Full metadata record
DC FieldValueLanguage
dc.contributor.authorChang, Chun-Wei (Jacky)en_US
dc.contributor.authorHuang, Hsuan-Ming (Ryan)en_US
dc.contributor.authorLin, Yuwenen_US
dc.contributor.authorWen, Charles H. -P.en_US
dc.date.accessioned2017-04-21T06:49:05Z-
dc.date.available2017-04-21T06:49:05Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-4673-9498-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/136380-
dc.description.abstractSoft errors, radiation-induced transient faults latched by memory elements, have emerged to be one dominant failure mechanism for scaled CMOS designs. Therefore, this paper presents a robust design named soft error resilient latch (SERL). Compared to BISER, one of the latest latch designs, SERL demonstrates better soft error protection with smaller area overhead.en_US
dc.language.isoen_USen_US
dc.subjectSERen_US
dc.subjectBISERen_US
dc.subjectSEUen_US
dc.subjectSETen_US
dc.titleSERL: Soft Error Resilient Latch Designen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT)en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000389516800035en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper