準確的軟性錯誤率分析

Abstract

在90奈米製程以下，電路因為宇宙射線而產生軟性錯誤的影響越來越大。尤其在製程變異下，更需要用統計的方法去估計電路的軟性錯誤率。然而，因為缺少高品質的統計模型，現今的軟性錯誤率統計分析研究無法達到良好的準確性。在這篇論文裡，我們考慮在在90奈米製程下，由於宇宙輻射線索引起的軟性錯誤。並且提出了一個高準確性查表法的統計模型，並利用蒙地卡羅去分析這些統計模型。我們更進一步探索如何使用似隨機的序列，已達到比較好的收斂並且增加速度。實驗結果顯示，我們可以在合理的時間內更準確的估計出軟性錯誤率。

For CMOS designs in sub 90nm technologies, statistical methods are necessary to accurately estimate circuit SER considering process variations. However, due to the lack of quality statistical models, current statistical SER (SSER) frameworks have not yet achieved satisfactory accuracy. In this work, we consider the soft error effect caused by cosmic radiation in sub 90nm technologies, and present accurate table-based cell models, based on which a Monte Carlo SSER analysis framework is built. We further propose a heuristic to customize the use of quasirandom sequences, which successfully speeds up the convergence of simulation error and hence shortens the runtime. Experimental results show that this framework is capable of more precisely estimating circuit SSERs with reasonable speed.