Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Chi-Chun | en_US |
dc.contributor.author | Chang, Kuo-Chiang | en_US |
dc.contributor.author | Liu, Chih-Wei | en_US |
dc.date.accessioned | 2017-04-21T06:49:05Z | - |
dc.date.available | 2017-04-21T06:49:05Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.isbn | 978-1-4673-9498-7 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/136383 | - |
dc.description.abstract | To overcome significant PVT variation in ultra low -voltage (LTV) operation, a new in-situ error detection and recovery mechanism is proposed to optimize circuit design for typical-case. The proposed technique detects glitch of a (ctitical-path) circuit output within the setup-time duration of a flip-flop and stalls the clock source, if possible, until the output is stable once an error is detected. Applying the proposed in-situ error detection, a test chip of an ULV 32-bit simple RISC with a 128-point FFT has been implemented with TSMC 40 nm CMOS process. The chip\'s measurement results confirms the functional correctness of the proposed in-situ error detection mechanism. Comparing that with the simple RISC with conventional worst case design principle, the proposed variable-latency ULV one reduces approximately 46% energy dissipation. And, with the similar energy consumption, the proposed PIN RISC achieves approximately 1.16 times throughput improvement. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | ultra-low voltage (LIN) design | en_US |
dc.subject | in-situ error detection | en_US |
dc.subject | error tolerance | en_US |
dc.subject | and variable latency | en_US |
dc.title | A Variable-Latency, Ultra-Low-Voltage RISC Processor with a New In-Situ Error Detection and Correction Technique | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2016 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT) | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000389516800059 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |