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dc.contributor.authorSong, Jinxingen_US
dc.contributor.authorLee, Yu-Minen_US
dc.contributor.authorHo, Chia-Tungen_US
dc.date.accessioned2017-04-21T06:49:03Z-
dc.date.available2017-04-21T06:49:03Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-4673-9498-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/136387-
dc.description.abstractThis work builds a thermal-aware placer, ThermPL, to abate both on-chip peak temperature and thermal gradient by developing thermal force and padding techniques cooperated with rough legalization in the force-directed global placement. Thermal padding is firstly adopted to reduce local power density. To make use of thermal force, we use the thermal gain basis to fast and accurately capture the temperature distribution of a placement, and effectively calculate the thermal contribution of cells based on the thermal locality. Then, we utilize the proposed innate thermal force assessed through thermal criticality and capabilities to spread cells away from hotspots. With the thermal gain basis, ThermPL can efficiently obtain the thermal profile of placement with the maximum error of 0.65% compared with a commercial tool. Experimental results show that ThermPL can provide 7% and 19% reduction on average in peak temperature and thermal gradient respectively within only 4.6% wirelength overhead.en_US
dc.language.isoen_USen_US
dc.titleThermPL: Thermal-aware Placement Based on Thermal Contribution and Localityen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT)en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000389516800018en_US
dc.citation.woscount0en_US
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