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dc.contributor.authorHung, BFen_US
dc.contributor.authorChiang, KCen_US
dc.contributor.authorHuang, CCen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorMcAlister, SPen_US
dc.date.accessioned2014-12-08T15:18:59Z-
dc.date.available2014-12-08T15:18:59Z-
dc.date.issued2005-06-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2005.848622en_US
dc.identifier.urihttp://hdl.handle.net/11536/13639-
dc.description.abstractWe have integrated a high-κ, LaAlO3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved-such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-κ dielectric.en_US
dc.language.isoen_USen_US
dc.subjecthigh-kappaen_US
dc.subjectLaAlO3en_US
dc.subjectthin-film transistors (TFTs)en_US
dc.subjectthreshold voltageen_US
dc.titleHigh-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectricen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2005.848622en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume26en_US
dc.citation.issue6en_US
dc.citation.spage384en_US
dc.citation.epage386en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000229522000014-
dc.citation.woscount39-
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