The Voltage-Triggered SET Mechanism and Self-Compliance Characteristics in Intrinsic Unipolar SiOx-Based Resistive Switching Memory

Full metadata record

DC Field	Value	Language
dc.contributor.author	Chang, Yao-Feng	en_US
dc.contributor.author	Fowler, Burt	en_US
dc.contributor.author	Chen, Ying-Chen	en_US
dc.contributor.author	Ji, Li	en_US
dc.contributor.author	Zhou, Fei	en_US
dc.contributor.author	Lee, Jack C.	en_US
dc.date.accessioned	2017-04-21T06:48:34Z	-
dc.date.available	2017-04-21T06:48:34Z	-
dc.date.issued	2014	en_US
dc.identifier.isbn	978-1-4799-5406-3	en_US
dc.identifier.issn	1548-3770	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136488	-
dc.language.iso	en_US	en_US
dc.title	The Voltage-Triggered SET Mechanism and Self-Compliance Characteristics in Intrinsic Unipolar SiOx-Based Resistive Switching Memory	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC)	en_US
dc.citation.spage	165	en_US
dc.citation.epage	+	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000346309800076	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper