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dc.contributor.authorChang, Yao-Fengen_US
dc.contributor.authorFowler, Burten_US
dc.contributor.authorChen, Ying-Chenen_US
dc.contributor.authorJi, Lien_US
dc.contributor.authorZhou, Feien_US
dc.contributor.authorLee, Jack C.en_US
dc.date.accessioned2017-04-21T06:48:34Z-
dc.date.available2017-04-21T06:48:34Z-
dc.date.issued2014en_US
dc.identifier.isbn978-1-4799-5406-3en_US
dc.identifier.issn1548-3770en_US
dc.identifier.urihttp://hdl.handle.net/11536/136488-
dc.language.isoen_USen_US
dc.titleThe Voltage-Triggered SET Mechanism and Self-Compliance Characteristics in Intrinsic Unipolar SiOx-Based Resistive Switching Memoryen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC)en_US
dc.citation.spage165en_US
dc.citation.epage+en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000346309800076en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper