The Fabrication and The Characteristics of Metal-Oxide-Semiconductor Transistors

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DC Field	Value	Language
dc.contributor.author	郭雙發	zh_TW
dc.contributor.author	張俊彥	zh_TW
dc.contributor.author	陳福全	zh_TW
dc.contributor.author	S.F.Guo	en_US
dc.contributor.author	C.Y.Chang	en_US
dc.contributor.author	F.C.Chen	en_US
dc.date.accessioned	2017-10-06T06:17:34Z	-
dc.date.available	2017-10-06T06:17:34Z	-
dc.date.issued	1967-04	en_US
dc.identifier.uri	http://hdl.handle.net/11536/137432	-
dc.description.abstract	The theory of MOS transistors is introduced in brief and the design and the fabrication of MOS transistors are disgussed in detail. The experimental MOS transistor characteristics show the effects of the surface states and can be determined by the gate capacitance versus gate voltage characteristics by a spacially designed automatic curve tracer.	en_US
dc.language.iso	en_US	en_US
dc.publisher	交大學刊編輯委員會	zh_TW
dc.title	The Fabrication and The Characteristics of Metal-Oxide-Semiconductor Transistors	en_US
dc.type	Campus Publications	en_US
dc.identifier.journal	交大學刊	zh_TW
dc.identifier.journal	SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY	en_US
dc.citation.volume	2	en_US
dc.citation.issue	2	en_US
dc.citation.spage	78	en_US
dc.citation.epage	86	en_US
Appears in Collections:	Science Bulletin National Chiao-Tung University

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