Zinc Dopping Effects on MOS Structure

Title:	Zinc Dopping Effects on MOS Structure
Authors:	張俊彥曹貴有 C.Y.Chang K.I.Tsao
Issue Date:	Oct-1968
Publisher:	交大學刊編輯委員會
Abstract:	It has been investigated that gold dopping into bulk of silicon can be used to controlling MOS transistor characteristics. However, zinc dopping into silicon , silicon dioxide as well as silicon dioxide- silicon interface has not yet been investigated.
URI:	http://hdl.handle.net/11536/137441
Journal:	交大學刊 SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume:	3
Issue:	1
Begin Page:	67
End Page:	72
Appears in Collections:	Science Bulletin National Chiao-Tung University

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