Zinc Dopping Effects on MOS Structure

標題:	Zinc Dopping Effects on MOS Structure
作者:	張俊彥曹貴有 C.Y.Chang K.I.Tsao
公開日期:	十月-1968
出版社:	交大學刊編輯委員會
摘要:	It has been investigated that gold dopping into bulk of silicon can be used to controlling MOS transistor characteristics. However, zinc dopping into silicon , silicon dioxide as well as silicon dioxide- silicon interface has not yet been investigated.
URI:	http://hdl.handle.net/11536/137441
期刊:	交大學刊 SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume:	3
Issue:	1
起始頁:	67
結束頁:	72
顯示於類別：	交大學刊

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