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dc.contributor.author張俊彥zh_TW
dc.contributor.author曹貴有zh_TW
dc.contributor.authorC.Y.Changen_US
dc.contributor.authorK.I.Tsaoen_US
dc.date.accessioned2017-10-06T06:17:42Z-
dc.date.available2017-10-06T06:17:42Z-
dc.date.issued1968-10en_US
dc.identifier.urihttp://hdl.handle.net/11536/137441-
dc.description.abstractIt has been investigated that gold dopping into bulk of silicon can be used to controlling MOS transistor characteristics. However, zinc dopping into silicon , silicon dioxide as well as silicon dioxide- silicon interface has not yet been investigated.en_US
dc.language.isoen_USen_US
dc.publisher交大學刊編輯委員會zh_TW
dc.titleZinc Dopping Effects on MOS Structureen_US
dc.typeCampus Publicationsen_US
dc.identifier.journal交大學刊zh_TW
dc.identifier.journalSCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITYen_US
dc.citation.volume3en_US
dc.citation.issue1en_US
dc.citation.spage67en_US
dc.citation.epage72en_US
Appears in Collections:Science Bulletin National Chiao-Tung University


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