Zinc Dopping Effects on MOS Structure

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DC Field	Value	Language
dc.contributor.author	張俊彥	zh_TW
dc.contributor.author	曹貴有	zh_TW
dc.contributor.author	C.Y.Chang	en_US
dc.contributor.author	K.I.Tsao	en_US
dc.date.accessioned	2017-10-06T06:17:42Z	-
dc.date.available	2017-10-06T06:17:42Z	-
dc.date.issued	1968-10	en_US
dc.identifier.uri	http://hdl.handle.net/11536/137441	-
dc.description.abstract	It has been investigated that gold dopping into bulk of silicon can be used to controlling MOS transistor characteristics. However, zinc dopping into silicon , silicon dioxide as well as silicon dioxide- silicon interface has not yet been investigated.	en_US
dc.language.iso	en_US	en_US
dc.publisher	交大學刊編輯委員會	zh_TW
dc.title	Zinc Dopping Effects on MOS Structure	en_US
dc.type	Campus Publications	en_US
dc.identifier.journal	交大學刊	zh_TW
dc.identifier.journal	SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY	en_US
dc.citation.volume	3	en_US
dc.citation.issue	1	en_US
dc.citation.spage	67	en_US
dc.citation.epage	72	en_US
Appears in Collections:	Science Bulletin National Chiao-Tung University

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