完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 凌宏璋 | zh_TW |
dc.contributor.author | H.C.Lin | en_US |
dc.date.accessioned | 2017-10-06T06:18:02Z | - |
dc.date.available | 2017-10-06T06:18:02Z | - |
dc.date.issued | 1972-01 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/137473 | - |
dc.description.abstract | Integrated semiconductor memories have many advantages in performance and cost and are threatening the dominance of magnetic cores for random-access memory. Both MOS and bipolar integrated circuits can be used to advantages. There are at present the read-write memory, read-only memory and alterable read-only memory. Other interesting semiconductor memory developments include the non-volatile memories, the charge coupled devices and "Bucket Brigade" shift registers, and amorphous glass. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | 交大學刊編輯委員會 | zh_TW |
dc.title | Semiconductor Memories__Invited Paper | en_US |
dc.type | Campus Publications | en_US |
dc.identifier.journal | 交大學刊 | zh_TW |
dc.identifier.journal | SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY | en_US |
dc.citation.volume | 5 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 11 | en_US |
dc.citation.epage | 25 | en_US |
顯示於類別: | 交大學刊 |