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dc.contributor.author凌宏璋zh_TW
dc.contributor.authorH.C.Linen_US
dc.date.accessioned2017-10-06T06:18:02Z-
dc.date.available2017-10-06T06:18:02Z-
dc.date.issued1972-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/137473-
dc.description.abstractIntegrated semiconductor memories have many advantages in performance and cost and are threatening the dominance of magnetic cores for random-access memory. Both MOS and bipolar integrated circuits can be used to advantages. There are at present the read-write memory, read-only memory and alterable read-only memory. Other interesting semiconductor memory developments include the non-volatile memories, the charge coupled devices and "Bucket Brigade" shift registers, and amorphous glass.en_US
dc.language.isoen_USen_US
dc.publisher交大學刊編輯委員會zh_TW
dc.titleSemiconductor Memories__Invited Paperen_US
dc.typeCampus Publicationsen_US
dc.identifier.journal交大學刊zh_TW
dc.identifier.journalSCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITYen_US
dc.citation.volume5en_US
dc.citation.issue2en_US
dc.citation.spage11en_US
dc.citation.epage25en_US
顯示於類別:交大學刊


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