Gal-xAlxAsl-yPy均一組成的液相成長

標題:	Gal-xAlxAsl-yPy均一組成的液相成長 An Uniformly Compositional Gal-xAlxAsl-yPy Layer Grown on GaAs by Liquid Phase Epitaxy
作者:	李耀亭 Y.T.Lee
公開日期:	Apr-1978
出版社:	交大學刊編輯委員會
摘要:	Aluminum and Phosphorus are distributed uniformly in Ga1-xAlxAs1-yPy epitaxial layer grown on GaAs substrate by Temperature Difference Method[4].
URI:	http://hdl.handle.net/11536/137603
期刊:	交通大學學報 The Journal of National Chiao Tung University
Volume:	4
起始頁:	27
結束頁:	28
Appears in Collections:	The Journal of National Chiao Tung University

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