標題: Gal-xAlxAsl-yPy均一組成的液相成長
An Uniformly Compositional Gal-xAlxAsl-yPy Layer Grown on GaAs by Liquid Phase Epitaxy
作者: 李耀亭
Y.T.Lee
公開日期: Apr-1978
出版社: 交大學刊編輯委員會
摘要: Aluminum and Phosphorus are distributed uniformly in Ga1-xAlxAs1-yPy epitaxial layer grown on GaAs substrate by Temperature Difference Method[4].
URI: http://hdl.handle.net/11536/137603
期刊: 交通大學學報
The Journal of National Chiao Tung University
Volume: 4
起始頁: 27
結束頁: 28
Appears in Collections:The Journal of National Chiao Tung University


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