完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ker, MD | en_US |
dc.contributor.author | Hsu, KC | en_US |
dc.date.accessioned | 2014-12-08T15:19:14Z | - |
dc.date.available | 2014-12-08T15:19:14Z | - |
dc.date.issued | 2005-05-01 | en_US |
dc.identifier.issn | 0894-6507 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TSM.2005.845112 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13769 | - |
dc.description.abstract | Turn-on speed is the main concern for an on-chip electrostatic discharge (ESD) protection device, especially in the nanoscale CMOS processes with ultrathin gate oxide. A novel dummy-gate-blocking silicon-controlled rectifier (SCR) device employing a substrate-triggered technique is proposed to improve the turn-on speed of an SCR device for using in an on-chip ESD protection circuit to effectively protect the much thinner gate oxide. The fabrication of the proposed SCR device with dummy-gate structure is fully process-compatible with general CMOS process, without using an extra mask layer or adding process steps. From the experimental results in a 0.25-mu m CMOS process with a gate-oxide thickness of similar to 50 angstrom, the switching voltage, turn-on speed, turn-on resistance, and charged-device-model ESD levels of the SCR device with dummy-gate structure have been greatly improved, as compared to the normal SCR with shallow trench isolation structure. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | charged device model (CDM) | en_US |
dc.subject | dummy gate | en_US |
dc.subject | electrostatic discharge (ESD) | en_US |
dc.subject | silicon-controlled rectifier (SCR) | en_US |
dc.title | SCR device fabricated with dummy-gate structure to improve turn-on speed for effective ESD protection in CMOS technology | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TSM.2005.845112 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | en_US |
dc.citation.volume | 18 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 320 | en_US |
dc.citation.epage | 327 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000229158000012 | - |
dc.citation.woscount | 11 | - |
顯示於類別: | 期刊論文 |