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dc.contributor.authorLiu, CPen_US
dc.contributor.authorChang, JJen_US
dc.contributor.authorChen, SWen_US
dc.contributor.authorChung, HCen_US
dc.contributor.authorWang, YLen_US
dc.date.accessioned2014-12-08T15:19:22Z-
dc.date.available2014-12-08T15:19:22Z-
dc.date.issued2005-04-01en_US
dc.identifier.issn0947-8396en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00339-004-3183-zen_US
dc.identifier.urihttp://hdl.handle.net/11536/13827-
dc.description.abstractCobalt pyramid-like nanostructures with sharp tips were formed on the surfaces of cobalt thin films grown by magnetron sputtering only when a negative bias was applied. There are two types of pyramids, which grew on top of a columnar grain structure directly from Si(001) substrates. The formation of pyramid-like nanostructures is only selective to a epsilon-Co (hcp) thin film but not a alpha-Co (fcc) thin film, where the basal plane is 10 (1) over bar0 with several well-defined low-energy faceted planes. When grown on Si(111) substrates, the shape of the basal plane changes to a pentagon or other polygon. The island nucleation seems to depend on adatom energy, sputtering rate and the interface stress between the Co thin film and the substrate, but growth is significantly determined by the minimum surface configuration of the structure.en_US
dc.language.isoen_USen_US
dc.titleFormation of pyramid-like nanostructures during cobalt film growth by magnetron sputteringen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00339-004-3183-zen_US
dc.identifier.journalAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSINGen_US
dc.citation.volume80en_US
dc.citation.issue7en_US
dc.citation.spage1601en_US
dc.citation.epage1605en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000227908400038-
dc.citation.woscount5-
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