標題: Gravity-Assisted Seeding Control for 1-D Material Growth
作者: Chen, C. C.
Hsu, Lun-Hao
Rern, Kai
Cheng, Y. T.
Hsieh, Yi-Fan
Wu, Pu-Wei
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: 1-D material;3D-IC;gravity-assisted;integrated nanoelectronic circuit;seeding control
公開日期: 1-七月-2009
摘要: This letter presents a seeding control scheme by utilizing gravity force to form an agglomeration of molten Co seeds on a patterned inverted silicon nanopyramid. Nanometer sized molten Co seeds formed on a nonwettable inverted pyramid surface can roll along the inclination followed by aggregation to form a singular seed with the size depending on the pyramid size and the thickness of as-deposited Co film inside the pyramid. The proposed scheme allowing the formation of well-aligned catalytic seeds with manipulated size will promise the control growth of 1-D material for practical integrated microelectronic device fabrication.
URI: http://dx.doi.org/10.1109/TNANO.2009.2023320
http://hdl.handle.net/11536/6997
ISSN: 1536-125X
DOI: 10.1109/TNANO.2009.2023320
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 8
Issue: 4
起始頁: 427
結束頁: 430
顯示於類別:期刊論文


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