利用碲為源層及增強阻障特性於氮化矽金屬導電橋接電阻式記憶體之可靠度優化研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	戴光駿	zh_TW
dc.contributor.author	曾俊元	zh_TW
dc.contributor.author	Dai, Guang-Jyun	en_US
dc.contributor.author	Tseng, Tseung-Yuen	en_US
dc.date.accessioned	2018-01-24T07:37:01Z	-
dc.date.available	2018-01-24T07:37:01Z	-
dc.date.issued	2016	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070350159	en_US
dc.identifier.uri	http://hdl.handle.net/11536/138881	-
dc.language.iso	en_US	en_US
dc.subject	碲	zh_TW
dc.subject	氮化矽	zh_TW
dc.subject	金屬導電橋接電組式記憶體	zh_TW
dc.subject	阻障層	zh_TW
dc.subject	Tellurium	en_US
dc.subject	Silicon nitride	en_US
dc.subject	CBRAM	en_US
dc.subject	Barrier	en_US
dc.title	利用碲為源層及增強阻障特性於氮化矽金屬導電橋接電阻式記憶體之可靠度優化研究	zh_TW
dc.title	Optimization of Reliability in SiN-based Conductive Bridge Random Access Memory by Using Tellurium as Source Layer and Enhancing Barrier Property	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子工程學系電子研究所	zh_TW
Appears in Collections:	Thesis