標題: | Post-treatment method of producing ordered array of anodic aluminum oxide using general purity commercial (99.7%) aluminum |
作者: | Chen, CC Chen, JH Chao, CG 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | aluminum;anodized;AAO;self-diffusion;nanochannels |
公開日期: | 1-三月-2005 |
摘要: | A new and simplified method of fabricating anodic aluminum oxide has been developed. This new method uses anodization but follows a route different from the commonly known 1- or 2-step anodization. General-purity (99.7%) commercial aluminum is used instead of the high-purity aluminum required in conventional anodization. The disordered arrangements of pores that initially form on the surface of aluminum rearranged by self-diffusion inside the anodic aluminum oxide (AAO) layer via long-term heat treatment. The enlargement of the pores on AAO that crystallized to gamma phase was achieved by pore widening. Uniformly distributed nanopores with a diameter of 75 nm and wall a thickness of 16 nm were formed on a 9 pm thick AAO film. These ordered nanochannels were obtained over an area of several square millimeters, with a density of 1.4 x 10(10) pores per cm(2). |
URI: | http://dx.doi.org/10.1143/JJAP.44.1529 http://hdl.handle.net/11536/13937 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.44.1529 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 44 |
Issue: | 3 |
起始頁: | 1529 |
結束頁: | 1533 |
顯示於類別: | 期刊論文 |