標題: Post-treatment method of producing ordered array of anodic aluminum oxide using general purity commercial (99.7%) aluminum
作者: Chen, CC
Chen, JH
Chao, CG
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: aluminum;anodized;AAO;self-diffusion;nanochannels
公開日期: 1-三月-2005
摘要: A new and simplified method of fabricating anodic aluminum oxide has been developed. This new method uses anodization but follows a route different from the commonly known 1- or 2-step anodization. General-purity (99.7%) commercial aluminum is used instead of the high-purity aluminum required in conventional anodization. The disordered arrangements of pores that initially form on the surface of aluminum rearranged by self-diffusion inside the anodic aluminum oxide (AAO) layer via long-term heat treatment. The enlargement of the pores on AAO that crystallized to gamma phase was achieved by pore widening. Uniformly distributed nanopores with a diameter of 75 nm and wall a thickness of 16 nm were formed on a 9 pm thick AAO film. These ordered nanochannels were obtained over an area of several square millimeters, with a density of 1.4 x 10(10) pores per cm(2).
URI: http://dx.doi.org/10.1143/JJAP.44.1529
http://hdl.handle.net/11536/13937
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.1529
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 3
起始頁: 1529
結束頁: 1533
顯示於類別:期刊論文


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