完整后设资料纪录
DC 栏位 | 值 | 语言 |
---|---|---|
dc.contributor.author | 吴昱廷 | zh_TW |
dc.contributor.author | 白田理一郎 | zh_TW |
dc.contributor.author | Wu, Yu-Ting | en_US |
dc.contributor.author | Riichiro, Shirota | en_US |
dc.date.accessioned | 2018-01-24T07:38:04Z | - |
dc.date.available | 2018-01-24T07:38:04Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.uri | http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070260325 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/139494 | - |
dc.description.abstract | 随着半导体元件制造科技的进步,元件的规格也越缩越小。因此,快闪记忆体的耐用性议题变得更加重要。在这篇论文中,因为氧化层的劣化是影响快闪记忆体续航力的主要原因,我们透过比较使用不同操作电压的记忆体元件来研究氧化层劣化的机制。此外,我们将分别使用自由基氧化制程和热氧化制程来形成氧化层的快闪记忆体元件来实验,比较其耐用性的表现,检测自由基氧化制程是否能够改善氧化层的品质。 在经过一万次写入抹除之后,透过新的研究方法,我们能够将浮动闸极电荷变化独立出来,单独分析在抹写中产生的氧化层捕获电荷量。透过实验数据的分析和可能模型的假设,我们能够计算出氧化层中正电荷和负电荷的数量及分布,并和实验数据做对比,从而得知氧化层在多次抹写之后劣化的原因,并可以得知自由基氧化制程和热氧化制程相比之下的优缺点。 | zh_TW |
dc.description.abstract | Semiconductor devices is continuously scaling down as device process technology being improved. Thus, endurance issue becomes more important especially in NAND flash memory. In this thesis, since tunneling oxide degradation is the main factor in endurance characteristic, we operated NAND flash memory cells with different biases to investigate the mechanism of oxide degradation. In addition, to see if Radical Oxidation process can improve the oxide quality, we compared the performance of cells whose tunneling oxide are grown by Thermal-Dry Oxidation (Dry) and Radical Oxidation (RO) respectively. After 10K cycles, by using new method we can investigate the oxide trapped charge (QOX) generated by program and erase (P/E) cycles without the influence of floating gate (FG) charge (QFG). By examining the measurement data and assumed possible models, the profile of positive and negative charges in the tunneling oxide can be estimated. Thus we can find out what happened in the tunneling oxide during P/E cycles and compare the advantages and disadvantages of radical oxidation process and thermal-dry oxidation process. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | 快闪记忆体 | zh_TW |
dc.subject | 可靠度 | zh_TW |
dc.subject | flash memory | en_US |
dc.subject | reliability | en_US |
dc.title | 快闪记忆体元件抹写周期可靠度中续航力与操作电压及氧化制程之关系 | zh_TW |
dc.title | W/E Cycling Bias and Oxidation Process Dependence in Endurance of NAND-Flash Reliability | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 电信工程研究所 | zh_TW |
显示于类别: | Thesis |