應用新型抗輻射單元的超大型積體設計流程及軟錯誤量測之實驗系統

標題:	應用新型抗輻射單元的超大型積體設計流程及軟錯誤量測之實驗系統 VLSI Design Flow with Radiation-Hardened Cells and Its Experimental System for Soft-Error Measurement
作者:	楊朝光闕河鳴 Yang, Chao-Guang Chiueh, Herming 電機工程學系
關鍵字:	由設計抗輻射;抗輻射單元;超大型積體設計流程;測試模型;重離子;單粒子翻轉;移位暫存器;系統晶片;radiation hardness by design;radiation-hardened cell;VLSI design flow;test pattern;heavy ion;single-event upset;shift registers;system-on-chip
公開日期:	2015
URI:	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070250720 http://hdl.handle.net/11536/139540
Appears in Collections:	Thesis