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dc.contributor.author王偉全zh_TW
dc.contributor.author劉柏村zh_TW
dc.contributor.author胡博琛zh_TW
dc.contributor.authorWang, Wei-Cyuanen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorHu, Po-Shengen_US
dc.date.accessioned2018-01-24T07:38:20Z-
dc.date.available2018-01-24T07:38:20Z-
dc.date.issued2016en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070358115en_US
dc.identifier.urihttp://hdl.handle.net/11536/139788-
dc.language.isoen_USen_US
dc.subject薄膜電晶體zh_TW
dc.subject通道保護層zh_TW
dc.subject有機光感保護層zh_TW
dc.subject非晶態氧化銦鎵鋅zh_TW
dc.subjectThin Film Transistoren_US
dc.subjectChannel Passivationen_US
dc.subjectOrganic Photosensitive Passivationen_US
dc.subjectAmorphous IGZOen_US
dc.title有機光感通道保護層於非晶態氧化銦鎵鋅薄膜電晶體技術應用之研究zh_TW
dc.titleDevelopment of a-InGaZnO Thin Film Transistor with Organic Photosensitive Channel Passivation Technologyen_US
dc.typeThesisen_US
dc.contributor.department照明與能源光電研究所zh_TW
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