标题: | 具双层锗奈米线聚(3辛烷噻吩)之有机薄膜电晶体 Dual-layered Germanium Nanowire-Poly(3-octylthiophene) Nanocomposite for organic-based Thin Film Transistor |
作者: | 詹之御 谢建文 Chan, Chi-Yu Hsieh, Chien-Wen 光电系统研究所 |
关键字: | 有机薄膜电晶体;锗奈米线;organic thin film transistor;Germanium Nanowire |
公开日期: | 2017 |
摘要: | 本论文以VLS成长法制备锗奈米线,藉由PDMS的拉伸及压缩转移奈米线并赋予方向性。首先以PDMS拉伸的方式将锗奈米线转移置P3OT有机薄膜电晶体。以源极到汲极的方向为参考轴,我们分别设置方向为 0°、45°、 90°的奈米线于有机薄膜电晶体的通道中,结果发现当奈米线以0°方向排列时,载子迁移率与无奈米线有机薄膜电晶体相比可提升5.2倍(2.84 × 10-3 至 1.47 × 10-2 cm2/Vs)。奈米线以90°方向排列时能将电流开关比由5.53 × 102 提升至 2.55 × 104。进而我们将锗奈米线以PDMS压缩的方式排列出更高密度的奈米线,在奈米线以0°方向排列时其载子迁移率可达2.59 × 10-2 cm2/Vs (为纯P3OT有机薄膜电晶体之9.1倍)。 In our study, we grew germanium nanowires by VLS mechanism, then we used PDMS to transfer nanowires. The nanowires were aligned by stretch or rebound of PDMS. Here, we stretched PDMS to transfer germanium nanowires into the P3OT organic thin-film transistor (OTFT), and the nanowires were set by three different directions. The include angle between the direction of source to drain are 0°, 45°, 90°, respectively. Then we found the mobility of the OTFT with germanium nanowires set in 0° is increased 5.2 times compared to without nanowires (2.84 × 10-3 to 1.47 × 10-2 cm2/Vs). Another, on/off ratio of the OTFT with germanium nanowires set in 90° is increased from 5.53 × 102 to 2.55 × 104. Further, we transfered nanowires by PDMS rebound to produce a device with a higher density of nanowires, and the mobility is more increased to 2.59 × 10-2 cm2/Vs (9.1 times compared to pristine P3OT OTFT). |
URI: | http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070358005 http://hdl.handle.net/11536/140405 |
显示于类别: | Thesis |