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dc.contributor.author邱于建zh_TW
dc.contributor.author張俊彥zh_TW
dc.contributor.author鄭淳護zh_TW
dc.contributor.authorChiu, Yu-Chienen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.date.accessioned2018-01-24T07:40:10Z-
dc.date.available2018-01-24T07:40:10Z-
dc.date.issued2017en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070380111en_US
dc.identifier.urihttp://hdl.handle.net/11536/141054-
dc.language.isoen_USen_US
dc.subject鐵電zh_TW
dc.subject負電容zh_TW
dc.subject氧化鋯鉿zh_TW
dc.subject非揮發性zh_TW
dc.subject記憶體zh_TW
dc.subjectferroelectricen_US
dc.subjectnegative capacitanceen_US
dc.subjectHfZrOen_US
dc.subjectnonvolatileen_US
dc.subjectmemoryen_US
dc.title應變閘極堆疊負電容鐵電介電層應用於低功耗記憶體與次10奈米電晶體之研究zh_TW
dc.titleStrained-Gate with Negative Capacitance Ferroelectric Dielectric Layer for Energy Efficient Memories and Sub-10nm Transistorsen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis


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