氧化層雙向選擇器於電阻式記憶體之應用

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	楊敦智	zh_TW
dc.contributor.author	曾俊元	zh_TW
dc.contributor.author	Yang, Tun-Chih	en_US
dc.contributor.author	Tseng, Tseung-Yuen	en_US
dc.date.accessioned	2018-01-24T07:40:30Z	-
dc.date.available	2018-01-24T07:40:30Z	-
dc.date.issued	2017	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070450159	en_US
dc.identifier.uri	http://hdl.handle.net/11536/141310	-
dc.language.iso	en_US	en_US
dc.subject	選擇器	zh_TW
dc.subject	電阻式記憶體	zh_TW
dc.subject	非線性選擇比	zh_TW
dc.subject	selector	en_US
dc.subject	RRAM	en_US
dc.subject	Nonlinearity	en_US
dc.title	氧化層雙向選擇器於電阻式記憶體之應用	zh_TW
dc.title	Oxide-based bipolar selector device for resistive switching memory applications	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子研究所	zh_TW
顯示於類別：	畢業論文