800nm波段高功率半導體雷射之研製、封裝與特性分析

Abstract

本論文利用非對稱型披覆層磊晶結構進行高功率雷射樣品製作，並透過引入電流阻擋層有效減低雷射鏡面端之載子密度，減低災難性光學損傷發生之風險，且透過電鍍厚金方式提高散熱效率。與此同時也透過光學鍍膜提高出光效率，使雷射整體斜率效率提高。封裝部分則將雷射二極體封裝於C-mount及submount，並且透過不同封裝條件嘗試整理出適合所有散熱基板的封裝區間，另外透過推力試驗檢測封裝品質，結果符合國際規範，顯示封裝品質相當良好。

量測結果則顯示此非對稱型披覆層磊晶結構設計，其遠場發散角為33度，與模擬結果相當吻合且遠小於傳統磊晶結構之遠場發散角45度，同時在雷射整體效率方面，腔長2mm之樣品其出光功率可達7W，功率轉換效率可高達55%，且元件整體熱阻值在封裝過後小於2(K/W)，整體元件特性與目前商用雷射產品相比已相當接近，顯示此磊晶結構將可應用於實際產品當中。

A novel epi-structure called asymmetric cladding of single GaAs quantum well laser structure design is presented. During fabrication process, a current blocking design have been utilized in order to reduce the carrier density at the facet,which can suppress catastrophic optical damage (COD). An anti-reflection (AR) and high reflection (HR) facet coating have been used as well in order to improve the slope efficiency. Bonding window of CuW C-mount and submount have been established by operating different bonding conditions. Results of destructive die shear test after bonding satisfies international standard MIL-STD-883G, showing a good bonding quality.

A narrower far field angle of 33˚ compare to 45˚ of traditional epi-structure design have been demonstrated. Results of far field angle is well-consisted to simulation result. Power conversion efficiency of 2mm cavity length device is as high as 55%, with output power above 7W. Thermal resistance measurement after die bonding is below 2(K/W), showing a good ability of heat dissipation. The overall characteristics of this high power semiconductor laser device based on this novel epi-structure design are as good as the characteristics of commercial laser products, which can satisfy the demands of current applications.