完整後設資料紀錄
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dc.contributor.author彭少甫zh_TW
dc.contributor.author冉曉雯zh_TW
dc.contributor.author蔡娟娟zh_TW
dc.contributor.authorPeng, Shao-Fuen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorTsai, Chuang-Chuangen_US
dc.date.accessioned2018-01-24T07:43:10Z-
dc.date.available2018-01-24T07:43:10Z-
dc.date.issued2016en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070250574en_US
dc.identifier.urihttp://hdl.handle.net/11536/143182-
dc.language.isozh_TWen_US
dc.subject空間電荷限制電晶體zh_TW
dc.subject耐壓zh_TW
dc.subject基極絕緣包覆zh_TW
dc.subject錫球接合zh_TW
dc.subject雙層絕緣層PVPzh_TW
dc.subjectSCLTen_US
dc.subjectVoltage Enduranceen_US
dc.subjectBase Coverageen_US
dc.subjectTin Balls Solderingen_US
dc.subjectDouble PVP Layersen_US
dc.title有機垂直式電晶體耐壓與整合研究zh_TW
dc.titleIntegration process and voltage endurance of vertical organic transistoren_US
dc.typeThesisen_US
dc.contributor.department光電工程研究所zh_TW
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