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dc.contributor.authorChang, CYen_US
dc.contributor.authorLin, HYen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorCheng, JYen_US
dc.contributor.authorChen, LPen_US
dc.contributor.authorDai, BTen_US
dc.date.accessioned2014-12-08T15:02:49Z-
dc.date.available2014-12-08T15:02:49Z-
dc.date.issued1996-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.485180en_US
dc.identifier.urihttp://hdl.handle.net/11536/1437-
dc.description.abstractA top-gate p-channel polycrystalline thin film transistor (TFT) has been fabricated using the polycrystalline silicon (poly-Si) film as-deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) and polished by chemical mechanical polishing (CMP), In this process, long-term recrystallization in channel films is not needed. A maximum field effect mobility of 58 cm(2)/V-s, ON/OFF current ratio of 1.110(7), and threshold voltage of -0.54 V were obtained. The characteristics are not poor. In this work, therefore, we have demonstrated a new method to fabricate poly-Si TFT's.en_US
dc.language.isoen_USen_US
dc.titleFabrication of thin film transistors by chemical mechanical polished polycrystalline silicon filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.485180en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume17en_US
dc.citation.issue3en_US
dc.citation.spage100en_US
dc.citation.epage102en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996TX68200007-
dc.citation.woscount29-
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