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dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorChiu, Yu-Chienen_US
dc.contributor.authorLiou, Guan-Linen_US
dc.date.accessioned2018-08-21T05:52:41Z-
dc.date.available2018-08-21T05:52:41Z-
dc.date.issued2017-10-01en_US
dc.identifier.issn1862-6254en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssr.201700098en_US
dc.identifier.urihttp://hdl.handle.net/11536/143870-
dc.description.abstractIn this work, we investigated the negative capacitance behavior of novel ferroelectric versatile memory with low-voltage-driven and fast ferroelectric switching. The combined storage mechanism strengthened the stability of ferroelectric polarization by interface aligned dipoles. The simulation results of first principle calculation indicated that the monoclinic-like orthorhombic phase of ferroelectric hafnium oxide facilitated the occurrence of S-shaped negative capacitance behavior. Furthermore, the control of phase transition may affect ferroelectric property and negative capacitance effect during program and erase states.en_US
dc.language.isoen_USen_US
dc.subjectferroelectricsen_US
dc.subjectHfZrOen_US
dc.subjectnegative capacitanceen_US
dc.subjectorthorhombicen_US
dc.titleExperimental Observation of Negative Capacitance Switching Behavior in One-Transistor Ferroelectric Versatile Memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/pssr.201700098en_US
dc.identifier.journalPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERSen_US
dc.citation.volume11en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000412162000012en_US
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