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dc.contributor.authorLi, HHen_US
dc.contributor.authorChu, YLen_US
dc.contributor.authorWu, CYen_US
dc.date.accessioned2014-12-08T15:02:49Z-
dc.date.available2014-12-08T15:02:49Z-
dc.date.issued1996-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.485175en_US
dc.identifier.urihttp://hdl.handle.net/11536/1438-
dc.description.abstractA new charge-pumping method with de source/drain biases and specified gate waveforms is proposed to extract the metallurgical channel length of MOSFET's by using a single device. Using two charge-pumping currents of a single nMOSFET measured under different V-GL (V-GH for pMOSFET's), the metallurgical channel length can be easily extracted with an accuracy of 0.02 mu m. It is shown that the proposed novel method is self-consistent with the results obtained by the charge-pumping current measured from multidevices under different gate pulse waveforms and bias conditions.en_US
dc.language.isoen_USen_US
dc.titleA novel method for extracting the metallurgical channel length of MOSFET's using a single deviceen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.485175en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume17en_US
dc.citation.issue3en_US
dc.citation.spage85en_US
dc.citation.epage87en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996TX68200002-
dc.citation.woscount0-
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