A novel method for extracting the metallurgical channel length of MOSFET's using a single device

doi:10.1109/55.485175

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Li, HH	en_US
dc.contributor.author	Chu, YL	en_US
dc.contributor.author	Wu, CY	en_US
dc.date.accessioned	2014-12-08T15:02:49Z	-
dc.date.available	2014-12-08T15:02:49Z	-
dc.date.issued	1996-03-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.485175	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1438	-
dc.description.abstract	A new charge-pumping method with de source/drain biases and specified gate waveforms is proposed to extract the metallurgical channel length of MOSFET's by using a single device. Using two charge-pumping currents of a single nMOSFET measured under different V-GL (V-GH for pMOSFET's), the metallurgical channel length can be easily extracted with an accuracy of 0.02 mu m. It is shown that the proposed novel method is self-consistent with the results obtained by the charge-pumping current measured from multidevices under different gate pulse waveforms and bias conditions.	en_US
dc.language.iso	en_US	en_US
dc.title	A novel method for extracting the metallurgical channel length of MOSFET's using a single device	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.485175	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	17	en_US
dc.citation.issue	3	en_US
dc.citation.spage	85	en_US
dc.citation.epage	87	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1996TX68200002	-
dc.citation.woscount	0	-
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