標題: | Internal current amplification induced by dielectric hole trapping in monolayer MoS2 transistor |
作者: | Liu, Pang-Shiuan Lin, Ching-Ting Hudec, Boris Hou, Tuo-Hung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | two-dimensional transition-metal dichalcogenides (TMDs);current amplification;charge trapping;subthreshold slope |
公開日期: | 24-十一月-2017 |
摘要: | Carrier transport in layered transition-metal dichalcogenides is highly sensitive to surrounding charges because of the atomically thin thickness. By exploiting this property, we report a new internal current amplification mechanism through positive feedback induced by dielectric hole trapping in a MoS2 back-gate transistor on a tantalum oxide substrate. The device exhibits an extremely steep subthreshold slope of 17 mV/decade, which is strongly dependent on the substrate material and drain bias. The steep subthreshold slope is attributed to the internal current amplification arising from the positive feedback between hole generation in MoS2 triggered by large lateral electric field and Schottky barrier narrowing induced by localized hole trapping in tantalum oxide near the source contact. |
URI: | http://dx.doi.org/10.1088/1361-6528/aa8fb0 http://hdl.handle.net/11536/144015 |
ISSN: | 0957-4484 |
DOI: | 10.1088/1361-6528/aa8fb0 |
期刊: | NANOTECHNOLOGY |
Volume: | 28 |
顯示於類別: | 期刊論文 |