標題: Internal current amplification induced by dielectric hole trapping in monolayer MoS2 transistor
作者: Liu, Pang-Shiuan
Lin, Ching-Ting
Hudec, Boris
Hou, Tuo-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: two-dimensional transition-metal dichalcogenides (TMDs);current amplification;charge trapping;subthreshold slope
公開日期: 24-Nov-2017
摘要: Carrier transport in layered transition-metal dichalcogenides is highly sensitive to surrounding charges because of the atomically thin thickness. By exploiting this property, we report a new internal current amplification mechanism through positive feedback induced by dielectric hole trapping in a MoS2 back-gate transistor on a tantalum oxide substrate. The device exhibits an extremely steep subthreshold slope of 17 mV/decade, which is strongly dependent on the substrate material and drain bias. The steep subthreshold slope is attributed to the internal current amplification arising from the positive feedback between hole generation in MoS2 triggered by large lateral electric field and Schottky barrier narrowing induced by localized hole trapping in tantalum oxide near the source contact.
URI: http://dx.doi.org/10.1088/1361-6528/aa8fb0
http://hdl.handle.net/11536/144015
ISSN: 0957-4484
DOI: 10.1088/1361-6528/aa8fb0
期刊: NANOTECHNOLOGY
Volume: 28
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