標題: Stability of double gate amorphous In-Ga-Zn-O thin-film transistors with various top gate designs
作者: Chen, Te-Chih
Kuo, Yue
Chang, Ting-Chang
Chen, Min-Chen
Chen, Hua-Mao
光電工程學系
Department of Photonics
公開日期: 1-Dec-2017
摘要: Electrical characteristics of the dual-gate amorphous indium gallium zinc oxide thin-film transistors have been studied. Compared with the traditional bottom gate thin film transistor, the dual-gate structure has a larger on-current and a smaller threshold voltage shift because of the formation of an additional carrier channel and the depletion of the semiconductor layer. The top gate-to-channel barrier height is critical to threshold voltage and the stability of the thin film transistor. The complete overlap between the top gate and the channel region is important for the top channel function, which warrants the large on-current and low threshold slope shift. Therefore, the top gate design is critical to the performance and stability of the dual-gate thin film transistor. (C) 2017 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.56.120303
http://hdl.handle.net/11536/144021
ISSN: 0021-4922
DOI: 10.7567/JJAP.56.120303
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 56
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